MIS capacitors with Al–SiO 2 –P(VDF·TrFE)–SiO 2 –Si structure were fabricated depositing P(VDF·TrFE) film by a spin coating method to investigate properties of very thin ferroelectric polymer films. By sandwiching the polymer film with SiO 2 films, application of an electrical field high enough for ferroelectricity measurement in several tens nm thick P(VDF·TrFE) films became possible. It is revealed that P(VDF·TrFE) film as thin as 32nm shows ferroelectricity by high frequency C - V measurements of the capacitors.
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Yamauchi et al. (1984) studied this question.
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