Secondary electron imaging as a two-dimensional dopant profiling technique: Review and update

Secondary electron (SE) imaging of semiconductors reveals contrast between n- and p-type areas that can serve as the basis for a two-dimensional dopant profiling technique. In this article, recent experiments that address sensitivity, spatial resolution, calibration methodology, p/n junction effects, and sample preparation issues are reviewed and discussed for boron doped silicon. In addition, several examples of successful applications of SE imaging as a two-dimensional dopant profiling technique are presented.