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Hall voltage in micro poly-Si Hall cells is evaluated to analyze the Hall effect in poly-Si films and investigate the possibility of magnetic sensors. Normal Hall effect occurs, but the Hall voltage has an offset voltage even when magnetic field is zero, whereas the change in the Hall voltage is proportional to the magnetic field. The offset voltage is caused by the control current flows through zigzag paths due to the random location of polycrystalline grains. These results mean that material evaluation based on the Hall effect is also available for poly-Si films and suggest the possibility of area sensors.
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Kimura et al. (2010) studied this question.
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