(Al,In,Ga)N‐based photodetectors. Some materials issues

III‐nitrides have become the most exciting optoelectronic materials along the last fifteen years. In the area of photodetection, their intrinsic properties and progresses in available substrates, layer growth and device processing, have made possible the development of AlGaN‐based detectors for the UV region, and by the use of InGaN alloys, for the full UVA and near visible ranges. In this article, a certain overview of III‐nitrides photodetector developments, present activities and foreseeing research paths are presented. The aim is to extract materials issues as the various detector structures and their performance are described. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)