15 kV, Large Area (1 cm²), 4H-SiC p-Type Gate Turn-Off Thyristors

In this paper, we report our recently developed 1 cm 2 , 15 kV SiC p-GTO with an extremely low differential on-resistance ( RON,diff ) of 4.08 mΩ•cm 2 at a high injection-current density (J AK ) of 600 ~ 710 A/cm 2 . The 15 kV SiC p-GTO was built on a 120 μm, 2×10 14 /cm 3 doped p-type SiC drift layer with a device active area of 0.521 cm 2 . Forward conduction of the 15 kV SiC p-GTO was characterized at 20°C and 200°C. Over this temperature range, the R ON,diff at J AK of 600 ~ 710 A/cm 2 decreased from 4.08 mΩ•cm 2 at 20°C to 3.45 mΩ•cm 2 at J AK of 600 ~ 680 A/cm 2 at 200°C. The gate to cathode blocking voltage (V GK ) was measured using a customized high-voltage test set-up. The leakage current at a V GK of 15 kV were measured 0.25 µA and 0.41 µA at 20°C and 200°C respectively.