Ge O x interface layer reduction upon Al-gate deposition on a HfO2∕GeOx∕Ge(001) stack

The metallization of HfO2∕Ge by Al at room temperature was studied using photoemission and inverse photoemission. Upon deposition, Al reduces the GeOx interfacial layer between Ge and HfO2, and a thin Al2O3 layer is formed at the Al∕HfO2 interface. The band alignment across the Al∕HfO2∕Ge stacks is also addressed.