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August 10, 2009Applied Physics Letters

Controllable resistance switching behavior of NiO/SiO2 double layers for nonvolatile memory applications

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JCJi‐Hyuk ChoiKorea Institute of Geoscience and Mineral ResourcesSDSachindranath DasJadavpur UniversityJMJae-Min MyoungYonsei University

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Choi et al. (2009) studied this question.

synapsesocial.com/papers/6a7635fdd13a508e20008e5dhttps://doi.org/10.1063/1.3204450
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