Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
July 28, 2008Applied Physics Letters

Role of structural defects in the unipolar resistive switching characteristics of Pt∕NiO∕Pt structures

View Full Paper
Ask AI
Bookmark
Share

Authors

CPChanwoo ParkSeoul National UniversitySJSang Ho JeonSamsung (South Korea)SCSeung Chul ChaeSeoul National University

Discussion

Loading...

Member takes

Implication

Key Points

Key points are not available for this paper at this time.

Cite This Study

Park et al. (2008) studied this question.

synapsesocial.com/papers/6a778d82d3a6aa87c6bdd285https://doi.org/10.1063/1.2963983
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Bipolar resistive switching in polycrystalline TiO2 films2007 · 216 citations
  2. 2Resistive memory switching in epitaxially grown NiO2007 · 60 citations
  3. 3Temperature dependence of high- and low-resistance bistable states in polycrystalline NiO films2007 · 151 citations
  4. 4Localized switching mechanism in resistive switching of atomic-layer-deposited TiO2 thin films2007 · 220 citations
  5. 5Two Series Oxide Resistors Applicable to High Speed and High Density Nonvolatile Memory2007 · 440 citations