Electroabsorption spectroscopy of well and barrier materials in amorphous semiconductor superlattices

Electroabsorption spectra of well and barrier regions have been separately determined in hydrogenated amorphous silicon/silicon carbide superlattices by taking advantage of built-in electric fields. Significant energy shifts are observed in materials with thin (<40 Å) layers. The data are consistent with a quantum size effect in the wells and substantial tunneling into the barriers, as predicted by a simple Kronig–Penney model.