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Al 2 O 3 tunnel barriers I, formed by the oxidization of Al metal of various thicknesses between two ferromagnetic (FM) films were investigated to understand the influence of overlayer metal Al on the junction magnetoresistance (JMR). The optimum thickness of Al was observed to lie in the range of 1–1.6 nm to achieve good JMR in FM–I–FM junctions. Additionally, such junctions can be used to study the magnetic proximity effect in ferromagnet/normal metal bilayer systems.
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Moodera et al. (1997) studied this question.
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