Self-propagating room-temperature silicon wafer bonding in ultrahigh vacuum

This is the authors' abstract. We don't add key points for this paper.

Wafer bonding of commercial 4 in. silicon wafers has been performed at room temperature under ultrahigh vacuum conditions. After local initiation of the bonding process the bonding area is self-propagating just as in the case of wafer bonding under atmospheric conditions. The room-temperature bonded wafers, without any additional heat treatment show a bonding strength typical for bulk material.