It is demonstrated that the incorporation of Te n-type δ doping close to a single-strained InGaAs/GaAs quantum well improves the temperature stability of the laser, as indicated by the higher characteristic temperature and by the reduced sensitivity of the threshold current to temperature variations. This improvement results from the strong coupling between the quantum well and the δ-doping well.
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Buchinsky et al. (1998) studied this question.
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