Silicon dopant imaging by dissipation force microscopy

Noncontact damping of a cantilever vibrating near a silicon surface was used to measure localized electrical dissipation. The dependence of the damping on tip-sample distance, applied voltage, carrier mobility, and dopant density was studied for n- and p-type silicon samples with dopant densities of 1014–1018 cm−3. Dopant imaging with 150 nm spatial resolution was demonstrated.