The interaction between $〈100〉$ climb-induced dislocation networks and a naturally occurring deep level (the DX center) in AlₓGa_1-xAs has been analyzed by scanning deeplevel transient spectroscopy. The concentration of DX centers was observed to decrease markedly in the vicinity of climb-induced $〈100〉$ networks, but remained nearly unchanged near glide-induced $〈110〉$ dislocation networks.
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Lang et al. (1979) studied this question.
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