Experimental study demonstrates increased mobility and carrier concentration with shorter channel lengths in graphene oxide transistors, highlighting sheet-to-sheet hopping transport.
Reduced graphene oxide thin-film transistors exhibit unique channel-length-dependent field-effect mobilities and carrier concentrations due to their structural and electronic properties. Increase in these characteristics with decreasing channel length is a consequence of the hopping transport from nanosheet to nanosheet and pinning of the Fermi energy at source and drain electrodes.
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Kobayashi et al. (2010) studied this question.
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