Solution‐Processed Organic n‐Type Thin‐Film Transistors

An organic n‐type transistor , where both insulating and active layer were processed from solution, has been produced. As the active layer the C 60 ‐derivative, [6,6]‐phenyl C 61 ‐butyric acid methyl ester (PCBM), was used. Its electron mobility was determined to be as high as μ e = 4.5 × 10 –3 cm 2 V –1 s –1 when calcium drain/source contacts were used. If these contacts are formed from more air‐stable metals, the device performance decreases.