Effects of the Deposition Sequence on Amorphous Silicon Thin-Film Transistors

We examined the effects of the deposition sequence on the threshold voltage and field-effect mobility in amorphous silicon thin-film transistors. When the nitrides are deposited after the a-Si:H(normal), the threshold voltages become more positive, and the field-effect mobilities are lower than with the inverted sequence. Photoluminescence measurements reveal that the tail states in the a-Si:H near the a-Si:H/a-SiN x interface for the normal sequence are wider than for the inverted sequence.