The results of thermal annealing at 800 and 900 °C of porous silicon samples in N 2 ambient conditions are discussed as a function of annealing time, annealing procedure, and sample preparation. The results show that N 2 annealing plays an important role in surface passivation and nanostructure feature size shrinkage and may result in photoluminescence (PL) intensity enhancement and saturation with annealing time under appropriate conditions. The experimental results strongly support the quantum confinement model for PL in porous silicon.
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Chen et al. (1994) studied this question.
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