Demonstrates the modulation of optical and electrical properties in boron-nitrogen co-doped diamond, suggesting optimized performance through HPHT annealing.
Key Points
The research aims to investigate the electrical and optical properties of boron-nitrogen co-doped diamond, particularly focusing on the effects of high-pressure high-temperature annealing.
Systematic investigation of graded nitrogen doping in BNDDs both in the as-grown state and after HPHT annealing.
Measurements of electrical and optical properties to assess the effects of nitrogen incorporation and annealing conditions.
HPHT annealing leads to increased hole concentration while maintaining stable p-type conduction.
Donor-acceptor pair recombination luminescence appears with a decrease in hole concentration in high-nitrogen BNDDs annealed above 2000 °C.
The findings confirm activation of neutral nitrogen donors under HPHT conditions, offering insights for optimizing n-type diamond.