Effect of B-O co-doping on the properties of HPHT diamond single crystals in Fe-Ni-C system

Key Points

• The aim is to investigate how boron-oxygen co-doping affects the properties of high-pressure high-temperature diamond single crystals.
• Utilized a high-pressure high-temperature synthesis method
• Applied various levels of boron and oxygen for co-doping
• Examined the electrical properties and structural integrity of the diamonds
• Co-doping with oxygen significantly reduced lattice distortion
• Improved electrical performance compared to standard boron doping
• Demonstrated potential for enhanced semiconductor applications