A recent proposal of Simmons and co-workers for the analysis of high-field thermally stimulated currents is extended to the case of thermoluminescence, with significant advantages for the study of continuous distributions of traps in bulk samples. The effect of the temperature smearing of the occupation function is also evaluated, and a short discussion of the method is given, especially in view of its application to the study of localized states distributions in disordered semiconductors.
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Bosacchi et al. (1974) studied this question.
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