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August 1, 1993IEEE Microwave and Guided Wave Letters

High-efficient class F GaAs FET amplifiers operating with very low bias voltages for use in mobile telephones at 1.75 GHz

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Authors

CDClaude DuvanaudCentre National de la Recherche ScientifiqueSDS. DietscheGPG. PatautON Semiconductor (United States)

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Duvanaud et al. (1993) studied this question.

synapsesocial.com/papers/6a76ebb2d8eb58afc2bd7e04https://doi.org/10.1109/75.242219
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