Characterization of In x Ga1−x As/GaAs quantum-well heterostructures by C-V measurements: Band offsets, quantum-confinement levels, and wave functions

The method of C-V profiling combined with self-consistent solution of Schrödinger’s and Poisson’s equations was used to determine with high precision the absolute values of the conduction-band offsets, energies of quantum-confinement levels, and charge-carrier concentrations in quantum-confinement subbands of In x Ga1−x As/GaAs quantum-well heterostructures with In content corresponding to the pseudomorphic growth mode (0 < x < 0.3). A characterization technique based on capacitance measurements is developed, enabling one to determine the main electronic parameters of quantum-confinement heterostructures.