The single domain insulator-to-metal transition in VO2 nanobeam triggered by coupling Joule heating and external strain is utilized to fabricate the high performance electromechanical switch, which can be controlled by stretching or compressing the substrate, and the device has the potential application in high sensitivity strain monitor and micro/nano-systems action control such as dynamic logic gate.
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Hu et al. (2011) studied this question.
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