In late 1962, the first semiconductor injection lasers were reported. While earlier workers had considered the possibility of light amplification in semiconductors, the achievement of high-efficiency electroluminescence from forward-biased GaAs p-n junctions was the event that catalyzed and accelerated efforts to demonstrate a semiconductor laser. This paper will attempt to review the experimental and theoretical work that preceded the actual demonstration of the semiconductor diode laser.
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Russell D. Dupuis (1987) studied this question.
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