Investigation of Deep Defects Due to α-Particle Irradiation in n-Silicon

Electrical properties of deep defects induced in n-silicon by α-particles of about 10 MeV energy at a dose of 1014 and 1015 cm−2 are studied by DLTS. The levels at Ec −0.18 eV, Ec −0.26 eV, and Ec −0.48 eV are identified as A center, V2 (=/−) and V2 (−/0) on the basis of activation energy, electron capture cross section, and annealing behavior. Two other irradiation related levels at Ec −0.28 eV and Ec −0.51 eV could not be related to any known center.