The photoionisation energy of the thermally induced Ev+0.42 eV level in p-silicon

The photoionisation energies of thermally induced levels (H1 and H2) in a quenched n+p silicon diode are measured by the DLOS technique. The photoionisation cross sections are well described by the Lucovsky model. The measured photoionisation energies (E v +0.42 eV and E v +0.52 eV) confirm the thermal activation energy determined by the DLTS method.