Monolithic integration of GaAs light-emitting diodes and Si metal-oxide-semiconductor field-effect transistors

A monolithic optoelectronic circuit, consisting of a GaAs light-emitting diode (LED) driven by a Si metal-oxide-semiconductor (MOS) transistor, has been fabricated. Light output as a function of applied gate voltage was measured. The LED’s were fabricated in GaAs layers on Ge-coated Si substrates containing MOS transistors. Normal transistor performance was observed after the GaAs LED fabrication, indicating that GaAs and Si processing technologies appear to be compatible.