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AlGaAs/GaAs double heterostructure (DH) laser diodes (LD's) have been fabricated on Si substrates using (GaP/GaAsP) strained layer super lattice (SLS) and (GaAsP/GaAs) SLS buffer layers grown entirely by MOCVD. The fabricated LD's have the threshold current density of 27 KA/cm 2 at 22°C and 8∼12 KA/cm 2 at 77 K.
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Sakai et al. (1985) studied this question.
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