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A slider system has been developed for crystallisation of semiconductor films on SiO2. The system consists of a graphite support, graphite strip heater and movable quartz substrate holder. A two heater procedure can be achieved with an RF heating coil. Single-crystal Ge films have been successfully grown over SiO2 on a Si substrate using a hetero lateral epitaxy by seeded solidification technique.
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Ohmachi et al. (1983) studied this question.
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