Thermal Oxidation of SiC in  N 2 O

Thermal oxidation kinetics of 3C and in at 1050 to 1150°C have been studied. The oxidation rate follows an unusual parabolic‐linear relationship that has also been found for oxidation of silicon in . The activation energy of the parabolic rate constant for , and for . The limiting mechanism for oxidation is attributed to the diffusion of through the oxynitride layer. metal oxide semiconductor capacitors fabricated in exhibit fixed oxide charge densities on the order of 10 12 cm −2 and are slightly lower than those oxidized in steam.