We have investigated the deep level trap centers in a p-n junction diode of 6H:SiC by deep level transient spectroscopy (DLTS) measurements. An electron trap center 0.71 eV below the conduction band edge is observed for the first time in 6H:SiC. The estimated trap center concentration and its capture cross section are found to be around 2×10 15 cm -3 and 5×10 -14 cm 2 , respectively. The trap center concentration profile is found to be uniform. The origin of trap centers is suggested.
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Uddin et al. (1993) studied this question.
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