Single-mask multiple lateral nanodiamond field emission devices fabrication technique

We report an efficient microfabrication process technique developed to realize multiple lateral diamond field emitter structures on the same wafer using a single mask. Nanodiamond films with grain size of 5–10nm deposited by CH4∕H2∕N2 microwave plasma enhanced chemical vapor deposition were selectively micropatterned using reactive ion etching at an etch rate of 0.5μm∕min. Several nanodiamond lateral field emission diodes and triodes of different emitter geometries and electrode configurations have been batch fabricated on a silicon-on-insulator wafer. Interelectrode spacing down to 2μm was achieved in arrays of devices on a SiO2 dielectric layer. This fabrication process technique, with its single-mask utility, high manufacturability, combined with its reproducibility, is an efficient and cost-effective approach to realize various configurations of field emission structures in wafer process technology. These nanodiamond vacuum nanoelectronic lateral devices hold high-speed and high-frequency operation potential.