Fabrication and Characterization of p-n Homojunctions in Cuprous Oxide by Electrochemical Deposition

The conduction type (n- or p-type) of electrochemically deposited cuprous oxide can be controlled by solution pH. It was found that cuprous oxides deposited at solution pH below 7.5 are n-type semiconductors, while cuprous oxides deposited at a solution pH above 9.0 are p-type semiconductors. A two-step process was adopted to deposit p-type and n-type cuprous oxides in sequence for the formation of a p-n homojunction in cuprous oxide. Photocurrent and current-voltage measurements demonstrate the successful formation of a p-n homojunction of cuprous oxide.