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The generation and propagation characteristics of surface acoustic waves in GaN-on-sapphire structures are strongly dependent on GaN layer thickness, interdigital transducer configuration, and the quality of the GaN-sapphire interface. Novelty: ClaimNovelty.INCREMENTAL. Consensus alignment: ConsensusAlignment.NEUTRAL.

October 23, 2025Electronics1 citationsOpen Access

Acoustic Emission from GaN-on-Sapphire Structures

BPB. PaszkiewiczWrocław University of Science and Technology BPB. PaszkiewiczWrocław University of Science and Technology BPB. PaszkiewiczWrocław University of Science and Technology

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Abstract

This paper presents a study on the propagation of acoustic waves in gallium nitride (GaN) layers deposited on sapphire substrate. The influence of GaN layer thickness and the configuration of interdigital transducers (IDTs) on the generation and propagation of different surface wave modes, including Rayleigh, Sezawa, and Love waves, was analyzed. Experimental measurements in the 100 MHz–6 GHz range were complemented by numerical simulations using the finite element method (FEM). The results demonstrated a strong dependence of wave characteristics on technological parameters, particularly the quality of the GaN–sapphire interface. The data obtained can be utilized for optimizing the design of acoustic sensors, resonators, and RF filters.

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