To enhance performances of graphene/SiO(2) based field-effect transistors (FETs), understanding of the transfer of carriers through the graphene/SiO(2) interface is crucial. In this paper, we have studied the temperature dependent transfer characters of graphene FETs. Hysteresis loop is shown to be dominated by trapping/detrapping carriers through the graphene/SiO(2) interface.
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Liao et al. (2010) studied this question.
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