Cylindrical FE–FE–DE heterostructure-assisted MOSFET for improved ON/OFF ratio and subthreshold swing

To investigate the potential for stable negative capacitance (NC) and better electrostatic control, a systematic study of cylindrical ferroelectric–dielectric heterostructures with diverse ferroelectric stacking configurations is presented. The cylindrical geometry is chosen because it provides better gate-to-channel control than traditional planar structures. By evaluating both FE–DE and FE–FE–DE configurations, our analysis clarifies how ferroelectric stack engineering impacts capacitance enhancement, voltage amplification, and the overall stability of the NC state. First an isolated cylindrical ferroelectric capacitor is studied to test the NC behavior, followed by the introduction of a dielectric layer in series to ensure stable operation. Of the materials investigated, Zr doped HfO 2 demonstrates the best performance, exhibiting superior internal voltage amplification, strong NC stabilization and enhanced capacitance. Furthermore, our results indicate that the FE–FE–DE heterostructures consistently outperforms simpler FE–DE structures. To validate these findings at the circuit level, we integrated these optimized heterostructures into a baseline MOSFET framework and tested them using a resistive load inverter, confirming that Zr doped HfO 2 based systems deliver the most effective performance for MOSFET applications.