The application of electron spectroscopies in dilute nitride semiconductor research for both chemical analysis and the determination of electronic and lattice vibrational properties is described. X-ray photoelectron spectroscopy of the nitrogen bonding configurations in dilute InN x Sb 1− x and InN x As 1− x alloys is presented. High resolution electron-energy-loss spectroscopy (HREELS) of the plasmon excitations in InN x Sb 1− x is shown to provide information on the electronic properties of the material, before and after annealing. HREELS is also used to investigate the GaN-like phonon modes in GaN x As 1− x alloys.
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Veal et al. (2004) studied this question.
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