One diode–one resistor (1D–1R) hybrid-type devices consisting of an inorganic Schottky diode and an organic unipolar memory show electrically rewritable switching characteristics as well as rectifying properties. The 1D–1R array architecture improves the sensing efficiency of the array memory cell, ultimately creating the possibility for high-density integrated organic memory devices without restrictions due to cross-talk between cells.
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Cho et al. (2009) studied this question.
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