Emissive Probe Study of CF₄/H₂ Etching Plasma

A new method using an emissive probe was applied to measurement of the electron temperature in a CF 4 /H 2 etching plasma in which the deposition of CF x polymer occurred. The experiment firstly showed that the measurement by our new method was never deteriorated by the deposition on the probe surface and was free from the influence of the deposition-induced plasma drift. The electron temperature thus measured rapidly decreased as the content of H 2 was increased. It was further shown that the electron temperature obtained by the emissive probe method was very consistent with that spectroscopically determined using the H α and H β line intensity ratio.