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January 1, 2002IEEE Journal of Selected Topics in Quantum Electronics

Plasma-assisted InP-to-Si low temperature wafer bonding

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DPD. M. PasquarielloCa' Foscari University of VeniceKHKlas HjortUppsala University

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Pasquariello et al. (2002) studied this question.

synapsesocial.com/papers/6a79241bc284d7a4ba5ae8a5https://doi.org/10.1109/2944.991407
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Also Consider

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  1. 1Crystalline Defects in InP-to-Silicon Direct Wafer Bonding2001 · 18 citations
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  5. 5Electrical properties of wafer-bonded GaAs/Si heterojunctions1998 · 51 citations