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May 15, 1986Journal of Applied Physics

Diffusion of As and Ge during growth of GaAs on Ge substrate by molecular-beam epitaxy: Its effect on the device electrical characteristics

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Authors

NCNavin ChandPetronas (Malaysia)JKJohn F. KlemNew Mexico State UniversityTHT. HendersonNational Park Service

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Chand et al. (1986) studied this question.

synapsesocial.com/papers/6a793eef5968508e56f36b3ehttps://doi.org/10.1063/1.336790
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Also Consider

Synapse has enriched 2 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1P n p GaAs/Ge/Ge phototransistor grown by molecular beam epitaxy: Implications for bipolar and hot-electron transistors1986 · 32 citations
  2. 2The electronic structure of Ge:GaAs(110) interfaces1982 · 71 citations