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Achieving p -type pyrite FeS 2 is essential for its effective use in thin film photovoltaics. Phosphorus (P) is emerging as a prominent anionic dopant in pyrite to induce p -type electrical conductivity. This study investigates the impact of P doping on the structural and electrical characteristics of pyrite thin films. Films are fabricated using DC magnetron sputtering, initially yielding sulfur (S)-poor FeS 2– x phase. Annealing in S atmosphere yields phase-pure pyrite, while coannealing with higher P introduces mixed pyrite-marcasite phase p -type conductivity. An Increasing of band gap from 1.08 to 1.43 eV is also observed, with high hole mobility of 150.62 cm 2 V –1 s –1 . P integration in FeS 2 is confirmed by X-ray photoelectron spectroscopy (XPS) via P–S and Fe–P binding energies. The mixed pyrite-marcasite phase is confirmed by Raman results. This mixed phase p -type FeS 2 can help increase the photovoltaic performance. However, it also shows excessive doping causing nonuniformity and contact behavior.
Mahanta et al. (Mon,) studied this question.
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