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A simple methyl-terminated (-CH(3)) surface passivation approach has been employed to enhance the performance of the bilayer graphene/Si nanohole array (BLG/SiNH array) Schottky junction based self-powered near infrared photodetector (SPNIRPD). The as-fabricated SPNIRPD exhibits high sensitivity to light at near infrared region at zero bias voltage. The I(light)/I(dark) ratio measured is 1.43 × 10(7), which is more than an order of magnitude improvement compared with the sample without passivation (~6.4 × 10(5)). Its corresponding responsivity and detectivity are 0.328 AW(-1) and 6.03 × 10(13) cmHz(1/2)W(-1), respectively. The demonstrated results have confirmed the high-performance SPNIRPD compared with the photo-detectors of similar type and its great potential application in future optoelectronic devices.
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Zeng et al. (2015) studied this question.
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