Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
February 21, 2017Optics ExpressOpen Access

Electrically pumped continuous-wave 13 µm InAs/GaAs quantum dot lasers monolithically grown on on-axis Si (001) substrates

View Full Paper
Ask AI
Bookmark
Share

Authors

SCSiming ChenBoston CollegeMLMengya LiaoUniversity College LondonMTMingchu TangUniversity of London

Discussion

Loading...

Member takes

Implication

Key Points

Key points are not available for this paper at this time.

Cite This Study

Chen et al. (2017) studied this question.

synapsesocial.com/papers/6a79698c4c448619ca0db8achttps://doi.org/10.1364/oe.25.004632
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 4 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Optimizations of Defect Filter Layers for 1.3-μm InAs/GaAs Quantum-Dot Lasers Monolithically Grown on Si Substrates2016 · 77 citations
  2. 2Quantum dot laser diode with low threshold and low internal loss2008 · 130 citations
  3. 3Growth and properties of GaAs/AlGaAs on nonpolar substrates using molecular beam epitaxy1985 · 196 citations
  4. 41.3 μm InAs/GaAs quantum‐dot laser monolithically grown on Si substrates operating over 100°C2014 · 87 citations