Modeling the DBR laser used as wavelength conversion device

In this paper, a novel and efficient way to model the dynamic field in optical DBR-type semiconductor devices is presented. The model accounts for the longitudinal carrier, photon, and refractive index distribution. Furthermore, the model handles both active and passive sections that may include gratings. Thus, simulations of components containing, e.g., gain sections, absorptive sections, phase sections, and gratings, placed arbitrarily along the longitudinal direction of the cavity, are possible. Here, the model has been used for studying the DBR laser as a wavelength converter. Particularly, to improve the performance of the DBT converter, the influence of system and device parameters will be discussed. Calculations show that ultrafast wavelength conversion with rise and fall times less than 50 ps can be obtained. Also, a regenerative effect simultaneous with the wavelength conversion is expected, e.g., improvements in the extinction ratio of the signal of more than 6 dB is predicted for correct design and operation of the component.>