Molecular beam epitaxial growth of CdTe on 5-in.-diam Si (100)

CdTe (111)B films with a 5 in. diameter have been grown on Si (100) substrates. They were characterized by in situ electron diffraction, x-ray diffraction, and low-temperature photoluminescence. The layer thickness was measured across two diameters with infrared transmission, and a standard deviation of 2.3% is obtained. This demonstrates the possibility of producing CdTe layers with a 5 in. diameter with excellent uniformity in terms of thickness and crystalline quality. Moreover, this demonstrates the potential for molecular beam epitaxial growth of other materials on large-area substrates. In fact, these are the largest monocrystalline layers of a II-VI semiconductor material ever grown by any technique.