A multistripe, single quantum well GaAs laser diode is passively mode locked without an external cavity. The intracavity saturable absorber is formed by ion implantation of the laser diode’s facet. The dose and energy of implanted ions were adjusted to achieve mode locking. This monolithically integrated laser diode and saturable absorber generates 40 GHz optical pulses with a pulse width of 5 ps.
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Zarrabi et al. (1991) studied this question.
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