Resistance memory devices based on a Cu/Mg‐doped ZnO/indium‐tin‐oxide structure on a PET (polyethylene terephthalate) flexible substrate were fabricated. The devices showed stable bipolar resistance switching property and good flexibility. The high to low resistance ratio was larger than 30 times, the endurance was more than 10 2 cycles, and the resistance retention was longer than 10 4 s. The resistance values of both high and low resistance states were not significantly changed by bending in a radius (≥20 mm) for more than 10 3 times. This resistance switching phenomenon of our devices can be explained by creation/rupture of metal conductive channels induced by electrochemical migration of Cu ions. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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Shi et al. (2010) studied this question.
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