Bipolar Resistance Switching in Fully Transparent ZnO:Mg-Based Devices

Transparent indium–tin-oxide/ZnO:Mg/F-doped SnO 2 devices that show bipolar resistance switching have been successfully fabricated. In addition to the transmittance above 80% for visible light, the devices show a high-to-low resistance ratio greater than 2.5, an endurance more than 10 5 cycles, and a resistance retention longer than 5000 s even at the temperature of 110 °C. The field-induced resistance change can be explained based on the formation/rupture of conduction filaments, due to the migration of structural defects in electric field. The present work shows the potential application of resistive random access memory to invisible electronics.